1.55μm emission from InAs quantum dots grown on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2099536
Reference19 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
2. Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
3. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
4. 1.3 μm lasers with AlInAs-capped self-assembled quantum dots
5. Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
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1. The developments of InP-based quantum dot lasers;Infrared Physics & Technology;2013-09
2. Toward 1550-nm GaAs-Based Lasers Using InAs/GaAs Quantum Dot Bilayers;IEEE Journal of Selected Topics in Quantum Electronics;2011-09
3. Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition;Nano Letters;2011-08-19
4. 1.52 [micro sign]m electroluminescence from GaAs-based quantum dot bilayers;Electronics Letters;2011
5. Persistent template effect in InAs/GaAs quantum dot bilayers;Journal of Applied Physics;2010-06
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