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Resonant exciton effects in InAs monolayer insertions in a GaAs matrix

  • Published:1996-05-01 Issue:9 Volume:79 Page:7164-7168
  • ISSN:0021-8979
  • Container-title:Journal of Applied Physics
  • language:en
  • Short-container-title:

Author:

Wang P. D.1,Ledentsov N. N.1,Torres C. M. Sotomayor1,Zhukov A. E.2,Kop’ev P. S.2,Ustinov V. M.2

Affiliation:

1. Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom

2. A. F. Ioffe Physical Technical Institute, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference36 articles.

1. S. Permogorov, Phys. Status Solidi B 68, 9 (1975).PSSBBD0370-1972

2. M.V. Klein, Phys. Rev. B 8, 919 (1973).PLRBAQ0556-2805

3. A. Nakamura and C. Weisbuch, Solid State Electron. 21, 1331 (1978).SSELA50038-1101

4. R.P. Stanley, J. Hegarty, R. Fischer, J. Feldmann, E.O. Gobel, R.D. Feldman, and R.F. Austin, Phys. Rev. Lett. 67, 128 (1991).PRLTAO0031-9007

5. N.N. Ledentsov, R. Notzel, P.S. Kopev, and K. Ploog, Appl. Phys. A 55, 533 (1992).APAMFC0947-8396

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical and structural effects of two-dimensional isovalent substitutions inA(III)−B(V)semiconductors;Physical Review B;2002-01-07

2. Carrier capture in ultrathin InAs/GaAs quantum wells;Physical Review B;2000-06-15

3. Recent Developments;Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures;1999

4. Exciton relaxation dynamics in quantum dots with strong confinement;Physical Review B;1996-12-15
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