Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects-Reference-Cited by-同舟云学术

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

Published:2004-09-15 Issue:6 Volume:96 Page:3255-3263
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Karoui A.,Sahtout Karoui F.,Rozgonyi G. A.,Yang D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1773921

Reference48 articles.

1. TEM Imaging of Dislocation Kinks, their Motion and Pinning

2. Model for dislocation locking by oxygen gettering in silicon crystals

3. T. Abe, K. Kikuchi, S. Shirai, and S. Muraoka, inSemiconductor Silicon/1981, edited by H. R. Huff, J. Kriegler, and Y. Takeishi (Softbound Symp. Serv. Electrochem. Soc., Pennington, New Jersey, 1981), p. 54.

4. Effects of nitrogen on dislocation behavior and mechanical strength in silicon crystals

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