Phase transformation in amorphous silicon under excimer laser annealing studied by Raman spectroscopy and mobility measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362640
Reference25 articles.
1. Thin film MOSFET’s fabricated in laser‐annealed polycrystalline silicon
2. Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs
3. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
4. Effect of hydrogenation of the leakage currents of laser-annealed polysilicon TFTs
5. Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films
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3. Laser treatment of micro-components' surface for improved tribological applications;Photon Processing in Microelectronics and Photonics V;2006-02-09
4. A comparison of laser- and furnace-annealed polysilicon structure;Semiconductor Science and Technology;2001-12-19
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