Comparative study of photoluminescence of undoped and erbium-doped size-controlled nanocrystalline Si∕SiO2 multilayered structures-Reference-Cited by-同舟云学术

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Comparative study of photoluminescence of undoped and erbium-doped size-controlled nanocrystalline Si∕SiO2 multilayered structures

Published:2004-08-15 Issue:4 Volume:96 Page:2254-2260
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Timoshenko V. Yu.,Lisachenko M. G.,Shalygina O. A.,Kamenev B. V.,Zhigunov D. M.,Teterukov S. A.,Kashkarov P. K.,Heitmann J.,Schmidt M.,Zacharias M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1773383

Reference34 articles.

1. Erbium implanted thin film photonic materials

2. Light Emission From Er-Doped Si: Materials Properties, Mechanisms, and Device Performance

3. The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+in crystalline silicon

4. Excitation and temperature quenching of Er-induced luminescence ina-Si:H(Er)

5. Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon

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