Improvement of far-field pattern in nitride laser diodes-Reference-Cited by-同舟云学术

Improvement of far-field pattern in nitride laser diodes

Published:1999-11-08 Issue:19 Volume:75 Page:2960-2962
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Takeuchi T.,Detchprohm T.,Iwaya M.,Hayashi N.,Isomura K.,Kimura K.,Yamaguchi M.,Amano H.,Akasaki I.,Kaneko Yw.,Shioda R.,Watanabe S.,Hidaka T.,Yamaoka Y.,Kaneko Ys.,Yamada N.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.125201

Reference12 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Shortest wavelength semiconductor laser diode

4. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

5. Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

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