Suppressed optical field and electron leakage and enhanced hole injection in InGaN laser diodes with InGaN–GaN–InGaN barriers
Author:
Affiliation:
1. College of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China
2. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Funder
Key Research & Development of Jiangsu Province
Equipment Pre-Research Program
Science & Technology Program of Yangzhou
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0071035
Reference22 articles.
1. Gain characteristics of InGaN quantum wells with AlGaInN barriers
2. White-Lighting Communication With a Lu3Al5O12:Ce3+/CaAlSiN 3:Eu2+ Glass Covered 450-nm InGaN Laser Diode
3. Blue laser diode (LD) and light emitting diode (LED) applications
4. Highly Uniform White Light-Based Visible Light Communication Using Red, Green, and Blue Laser Diodes
5. Comparison between blue lasers and light-emitting diodes for future solid-state lighting
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