Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4796141
Reference19 articles.
1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
2. Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H– and 6H–silicon carbide
3. Electrically active defects in irradiated 4H-SiC
4. Lifetime-limiting defects in n− 4H-SiC epilayers
5. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation
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