Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120062
Reference20 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films ofInxGa1−xAs on GaAs(100)
3. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
4. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
5. Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs
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