Bonding pad induced stresses in (Al,Ga)As double heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332592
Reference11 articles.
1. Continuously operated (Al,Ga)As double‐heterostructure lasers with 70 °C lifetimes as long as two years
2. Strain‐induced degradation of GaAs injection lasers
3. Strain‐enhanced luminescence degradation in GaAs/GaAlAs double‐heterostructure lasers revealed by photoluminescence
4. Strain‐related degradation phenomena in long‐lived GaAlAs stripe lasers
5. (Al,Ga) As Double-Heterostructure Lasers: Comparison of Devices Fabricated with Deep and Shallow Proton Bombardment
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of thermal behaviour of high power semiconductor laser arrays by means of the finite element method (FEM);Journal of Thermal Analysis;1995-09
2. Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodes;IEEE Journal of Quantum Electronics;1991-04
3. The Interplay of Thermo-Mechanical Properties in the Growth and Processing of III-V Materials;MRS Proceedings;1991
4. Macroscopic Stress and Device Reliability of 1.3μm and 1.5μm Wavelength GaInAsP Channeled Substrate Buried Heterostructure Lasers;MRS Proceedings;1990
5. Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasers;Journal of Applied Physics;1989-08-15
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