Author:
Summers C. J.,Miklosz J. C.
Subject
General Physics and Astronomy
Cited by
13 articles.
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1. SIMS Study of 30keV H+ Ion-Implanted n-GaAs;Defect and Diffusion Forum;2011-10
2. Photoluminescence study of GaAs implanted with 100MeV 28Si ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-06
3. The crystalline state;Physical Properties of Polymers;2004-03-25
4. Chapter 3 Photoluminescence and Raman Scattering of Ion Implanted Semiconductors. Influence of Annealing;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
5. Reduction of induced damage in GaAs processed by Ga+focused‐ion‐beam‐assisted Cl2etching;Journal of Applied Physics;1990-09