High-performance oxide thin film transistor fully fabricated by a direct rheology-imprinting-Reference-Cited by-同舟云学术

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High-performance oxide thin film transistor fully fabricated by a direct rheology-imprinting

Published:2017-11-27 Issue:22 Volume:111 Page:223504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tue Phan Trong¹²,Fukada Kazuhiro²,Shimoda Tatsuya¹²

Affiliation:

1. School of Materials Science, Japan Advanced Institute of Science and Technology 1-1 Asahidai, Nomi-shi, Ishikawa 923-1211, Japan

2. Japan Science and Technology Agency, ERATO Shimoda Nano-Liquid Process Project 2-13 Asahidai, Nomi-shi, Ishikawa 923-1211, Japan

Funder

MEXT | Japan Science and Technology Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference24 articles.

1. All jet-printed polymer thin-film transistor active-matrix backplanes

2. Additive jet printing of polymer thin-film transistors

3. Solution-processed silicon films and transistors

4. High-Resolution Inkjet Printing of All-Polymer Transistor Circuits

5. Dewetting of conducting polymer inkjet droplets on patterned surfaces

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and patterning properties of direct nanoimprinted indium oxide (In2O3) and indium tin oxide (ITO);Japanese Journal of Applied Physics;2019-05-08

2. Device Fabrication by n-RP;Nanoliquid Processes for Electronic Devices;2019

3. Nano-rheology printing of sub-0.2 μm channel length oxide thin-film transistors;Nano Futures;2018-07-24

4. Low-Temperature Solution-Processable Functional Oxide Materials for Printed Electronics;Green Electronics;2018-06-20

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