A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2360379
Reference42 articles.
1. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
2. Speed superiority of scaled double-gate CMOS
3. Double-gate CMOS: symmetrical- versus asymmetrical-gate devices
4. A process/physics-based compact model for nonclassical CMOS device and circuit design
5. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
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