Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers-Reference-Cited by-同舟云学术

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Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers

Published:2003-11-10 Issue:19 Volume:83 Page:4035-4037
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pohl P.,Renner F. H.,Eckardt M.,Schwanhäußer A.,Friedrich A.,Yüksekdag Ö.,Malzer S.,Döhler G. H.,Kiesel P.,Driscoll D.,Hanson M.,Gossard A. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1625108

Reference7 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. A theory of the electrical breakdown of solid dielectrics

3. 88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers

4. Use of nonstoichiometry to form GaAs tunnel junctions

5. Growth-temperature dependence of the microstructure of ErAs islands in GaAs

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