Interface accommodation mechanism for weakly interacting epitaxial systems
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813548
Reference34 articles.
1. One-dimensional dislocations. I. Static theory
2. Defects in epitaxial multilayers
3. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
4. Modeling the plastic relaxation onset in realistic SiGe islands on Si(001)
5. Cyclic Growth of Strain-Relaxed Islands
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