Oxygen and vacancy defects in silicon. A quantum mechanical characterization through the IR and Raman spectra-Reference-Cited by-同舟云学术

Oxygen and vacancy defects in silicon. A quantum mechanical characterization through the IR and Raman spectra

Published:2021-05-07 Issue:17 Volume:154 Page:174707
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Platonenko Alexander¹^ORCID,Colasuonno Fabio²^ORCID,Gentile Francesco Silvio³^ORCID,Pascale Fabien⁴^ORCID,Dovesi Roberto²^ORCID

Affiliation:

1. Institute of Solid State Physics, University of Latvia, 8 Kengaraga Street, LV1063 Riga, Latvia

2. Dipartimento di Chimica, Università di Torino and NIS (Nanostructured Interfaces and Surfaces) Centre, Via P. Giuria 5, 10125 Torino, Italy

3. Department of Chemical Sciences, Università degli studi di Napoli Federico II, Complesso Universitario di Monte Sant’Angelo, Via Cintia, 21, 80126 Napoli, Italy

4. Université de Lorraine, Nancy, CNRS, Laboratoire de Physique et Chimie Théoriques, UMR, 7019 Vandoeuvre-les-Nancy, France

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0044106

Reference20 articles.

1. Vibrational absorption of carbon in silicon

2. B. Pajot, Semiconductors and Semimetals (Elsevier, 1994), Vol. 42, pp. 191–249.

3. Absorption of oxygen in silicon in the near and the far infrared

4. Computational study of interstitial oxygen and vacancy-oxygen complexes in silicon

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