Electrical and structural properties of Re/GaAs Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369777
Reference17 articles.
1. TiW Silicide gate self-alignment technology for ultra-high-speed GaAs MESFET LSI/VLSI's
2. A new self-aligned GaAs FET with a Mo/WSixT-gate
3. Compound formation at the interface between cobalt thin films and single‐crystal GaAs
4. Contact reactions in Pd/GaAs junctions
5. Morphological development during platinum/gallium arsenide interfacial reactions
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1. The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature;International Journal of Electronics;2018-11-17
2. Thermal stability of rhenium Schottky contacts on n-type AlxGa1−xN;Applied Physics Letters;2002-08-26
3. Microstructural and interfacial properties of the Ru/p-InP(100) heterostructures;Journal of Physics and Chemistry of Solids;2001-04
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