Indium doping effects on vapor‐phase growth of ZnS on GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336443
Reference9 articles.
1. Heteroepitaxial growth of ZnS on GaP by the close-spaced technique
2. Epitaxial growth of ZnS on GaP by Zn-S-H2 CVD method
3. The effect of bypass flows on heteroepitaxial growth of ZnS on GaP
4. Mass transport processes associated with the epitaxial growth of ZnS IN H2: The effects of a bypass flow
5. Vapour-phase epitaxial growth of ZnS on GaP
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1. Oriented In3–x S4 films on the (100) surface of Si, GaAs, and InP single crystals;Inorganic Materials;2017-05-23
2. Orientation dependences of the growth rate and iodine incorporation for the ZnSe growth by hydrogen transport vapor phase epitaxy;Journal of Crystal Growth;1994-12
3. Preparation of zinc sulfide thin films by ultrasonic spray pyrolsis from bis(diethyldithiocarbamato) zinc(II);Thin Solid Films;1993-03
4. Li and Sb doping effects on the growth behavior of ZnS on GaP substrates;Journal of Applied Physics;1991-06-15
5. Iodine‐doping effects on the vapor‐phase epitaxial growth of ZnSe on GaAs substrates;Journal of Applied Physics;1990-01
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