Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques
Author:
Affiliation:
1. University Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, France
2. University Grenoble Alpes, F-38000 Grenoble, France and CEA-LETI, MINATEC Campus, F-38054 Grenoble, France
Funder
Applied Materials
Basis Technological Research
Labex Minos
MOSINAS project
PFNC
RENATECH programs
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Reference13 articles.
1. Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping
2. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping
3. Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence
4. Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices
5. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon
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1. GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications;Post-Transition Metals;2021-04-14
2. Comprehension of peculiar local emission behavior of InGaAs quantum well by colocalized nanocharacterization combining cathodoluminescence and electron microscopy techniques;Journal of Vacuum Science & Technology B;2018-07
3. Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence;Materials;2018-06-20
4. Understanding and improving the low optical emission of InGaAs quantum wells grown on oxidized patterned (001) silicon substrate;Applied Physics Letters;2018-05-14
5. Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices;High Mobility Materials for CMOS Applications;2018
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