Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2996280
Reference21 articles.
1. Erbium in silicon
2. Tetragonal germanium flims deposited by the cluster‐beam evaporation technique
3. Strong quantum-confinement effects in the conduction band of germanium nanocrystals
4. Anisotropic and Passivation-Dependent Quantum Confinement Effects in Germanium Nanowires: A Comparison with Silicon Nanowires
5. The 1.54-μm photoluminescence from an (Er, Ge) co-doped SiO[sub 2] film deposited on Si by rf magnetron sputtering
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