High responsivity InGaAsSb p–n photodetector for extended SWIR detection
Author:
Affiliation:
1. Solid State Physics Department, Applied Physics Division, Soreq NRC, Yavne 81800, Israel
2. SCD-SemiConductor Devices, P.O. Box 2250, Haifa 31021, Israel
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0037192
Reference20 articles.
1. Status of MCT focal plane arrays in France
2. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices
3. Pseudopotential calculations of band gaps and band edges of short-period(InAs)n∕(GaSb)msuperlattices with different substrates, layer orientations, and interfacial bonds
4. GaSb-based infrared detectors utilizing InAsPSb absorbers
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