Barrier height fluctuations in InGaN polarization dipole diodes
Author:
Affiliation:
1. Department of Physics, University of California Santa Barbara, Santa Barbara, California 93106, USA
2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106, USA
Funder
Office of Naval Research (ONR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4934876
Reference28 articles.
1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes
4. Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes
5. AlGaN/GaN high electron mobility transistors with InGaN back-barriers
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