Velocity saturation and the conduction‐band structure of Ga1−xAlxAs under pressure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89570
Reference15 articles.
1. A high speed current-limiting device from GaAsxP1-x
2. Velocity saturation inn‐type AlxGa1−xAs single crystals
3. Transit-time-induced microwave negative resistance in Ga1−xAlxas—GaAs heterostructure diodes
4. GaAs lower conduction-band minima: Ordering and properties
5. 3-level conduction-band structure of GaAs from high-stress and high-field measurements
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1. Calibration of I(E) into v(d)(E) characteristics on H-shaped Gunn devices for AlzGa1-xAs alloys under hydrostatic pressure;Czechoslovak Journal of Physics;1998
2. Thermionic emission in a hydrodynamic model for heterojunction structures;Solid-State Electronics;1994-09
3. Some Low Field Transport Properties of LPE grown GaAs and AlAs Mixed Alloys and Saxena's Deep Donor;Defence Science Journal;1994-01-01
4. Electron transport across a wide AlGaAs barrier;Journal of Applied Physics;1993-11
5. LiNbO3 Devices;Waveguide Optoelectronics;1992
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