Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367876
Reference36 articles.
1. Heterojunction bipolar transistors using Si-Ge alloys
2. Valence energy‐band structure for strained group‐IV semiconductors
3. Effect of interface quality on the electrical properties ofp‐Si/SiGe two‐dimensional hole gas systems
4. Thermal annealing of modulation‐doped Si/SiGe heterostructures with high electron mobilities
5. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography
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