Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits-Reference-Cited by-同舟云学术

Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

Published:2014-09-15 Issue:11 Volume:105 Page:113513
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Prasad Neetu¹,Kumari Anita¹,Bhatnagar P. K.¹,Mathur P. C.¹,Bhatia C. S.²

Affiliation:

1. Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021, India

2. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576

Funder

Indian Nanoelectronics User Program, IIT Bombay, India

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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