Identification of oxide precipitates in annealed silicon crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90323
Reference4 articles.
1. Impurity clustering effects on dislocation generation in silicon
2. Characterization of structural defects in annealed silicon containing oxygen
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. SiOxprecipitate composition in Si, revisited: Discussion closed?;physica status solidi (RRL) - Rapid Research Letters;2015-09-09
2. On the mechanism of carrier scattering at oxide precipitates in Czochralski silicon;Journal of Materials Science: Materials in Electronics;2015-02-22
3. Oxygen precipitation in silicon;Journal of Applied Physics;1995-05
4. Chapter 9 Mechanisms of Oxygen Precipitation: Some Quantitative Aspects;Semiconductors and Semimetals;1994
5. SiO2precipitate strain relief in Czochralski Si: Self‐interstitial emission versus prismatic dislocation loop punching;Journal of Applied Physics;1992-09-15
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