Polarization anisotropy in quasiplanar sidewall quantum wires on patterned GaAs (311)A substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370663
Reference19 articles.
1. Formation of a high quality two‐dimensional electron gas on cleaved GaAs
2. Stimulated emission in semiconductor quantum wire heterostructures
3. Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy
4. Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311)A substrates
5. Patterned growth on high‐index GaAs (n11) substrates: Application to sidewall quantum wires
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Acoustic Carrier Transport in GaAs Nanowires;Topics in Applied Physics;2013-09-28
2. Direct Spectroscopic Evidence for the Formation of One-Dimensional Wetting Wires During the Growth of InGaAs/GaAs Quantum Dot Chains;Nano Letters;2006-08-09
3. Dynamic band-structure modulation of quantum wells by surface acoustic waves;Physical Review B;2001-03-07
4. Photoluminescence Polarization Anisotropy in Quasi-Planar Sidewall Quantum Wires on GaAs (311)A;physica status solidi (a);1999-09
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