A model for thermal oxidation of Si and SiC including material expansion-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A model for thermal oxidation of Si and SiC including material expansion

Published:2015-02-28 Issue:8 Volume:117 Page:084501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Christen T.,Ioannidis A.^ORCID,Winkelmann C.^ORCID

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4913603

Reference52 articles.

1. Fundamental Aspects of Silicon Oxidation

2. Introduction to Microfabrication

3. K. Stern , “ Oxidation of silicon, silicon carbide (SiC), and silicon nitride (Si3N4),” Naval Research Lab Report AD-A168886, 1986.

4. Kinetics of ultrathin SiO2growth

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent advances in techniques for fabrication and characterization of nanogap biosensors: A review;Biotechnology and Applied Biochemistry;2021-08-22

2. Oxidation Behavior of InAlN during Rapid Thermal Annealing;physica status solidi (a);2021-08-16

3. Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET;Applied Physics Letters;2019-09-02

4. Macroscopic simulations of the SiC thermal oxidation process based on the Si and C emission model;Diamond and Related Materials;2019-02

5. Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers;AIP Advances;2015-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3