Diamond micro-Raman thermometers for accurate gate temperature measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4879849
Reference18 articles.
1. Physical degradation of GaN HEMT devices under high drain bias reliability testing
2. Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test
3. AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress
4. Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs
5. AlGaN/GaN HFET reliability
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