Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors-Reference-Cited by-同舟云学术

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Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors

Published:2014-03-14 Issue:10 Volume:115 Page:104501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Tue P. T.¹²,Miyasako T.³,Tokumitsu E.¹²,Shimoda T.¹²

Affiliation:

1. ERATO, Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, 2-13 Asahidai, Nomi, Ishikawa 923-1211, Japan

2. Green Devices Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, Japan

3. Yokkaichi Research Center, JSR Corporation, Yokkaichi 510-8552, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference22 articles.

1. Ferroelectric Memories

2. Fatigue-free ferroelectric capacitors with platinum electrodes

3. Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology

4. Totally solution-processed ferroelectric-gate thin-film transistor

5. Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor

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