Raman scattering determination of free‐carrier concentration and surface space‐charge layer in 〈100〉n‐GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95967
Reference9 articles.
1. Raman spectroscopy as a surface sensitive technique on semiconductors
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3. Raman spectroscopy as a surface sensitive technique on semiconductors
4. Raman scattering studies of surface space charge layers and Schottky barrier formation in InP
5. Passivation of the GaAs surface by an amorphous phosphorus overlayer
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