Photoemissions related to the kink effect in GaAs metal‐semiconductor field‐effect transistors with an Al0.2Ga0.8As/GaAs buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109978
Reference9 articles.
1. A study of photon emission from n-channel MOSFET's
2. Evaluation of gate oxide reliability using luminescence method
3. Hot-electron-induced photon energies in n-channel MOSFETs operating at 77 and 300 K
4. Hot‐carrier light emission from silicon metal‐oxide‐semiconductor devices
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact ionization in compound semiconductor devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
2. Hot-carrier luminescence in sub-quartermicrometer high-speed GaAs MESFET's;IEEE Transactions on Electron Devices;1999
3. Substrate-related kink effects with a strong light-sensitivity in AlGaAs/InGaAs PHEMT;IEEE Transactions on Electron Devices;1997
4. Gate pulse frequency‐dependent kink effects in GaAs metal‐semiconductor field‐effect‐transistors with a low‐temperature‐grown buffer layer;Journal of Applied Physics;1995-12
5. Impact ionization in GaAs metal–semiconductor field‐effect transistors with a lightly doped drain structure and an Al0.2Ga0.8As/GaAs heterobuffer layer;Journal of Applied Physics;1995-04-15
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