Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371240
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1. Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors;Journal of Applied Physics;2023-12-28
2. Electrical properties of Cu/Pd2Si Schottky contacts to AlGaN/GaN-on-Si HEMT heterostructures;Materials Science in Semiconductor Processing;2023-01
3. Optimized response of the AlGaN/GaN heterostructure with asymmetric gratings at oblique incidence in the terahertz regime;Journal of the Optical Society of America A;2021-06-09
4. Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling;Applied Surface Science;2017-02
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