Carrier escape time dependence on multiple quantum well structure in InGaAs/In(Ga)AlAs systems
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111369
Reference8 articles.
1. Anisotropic electroabsorption and optical modulation in InGaAs/InAlAs multiple quantum well structures
2. Switching Characteristics of InGaAs/InP Multiquantum Well Voltage-Controlled Bistable Laser Diodes
3. Side-light-injection MQW bistable laser using saturable absorption and gain quenching
4. Quantum well carrier sweep out: relation to electroabsorption and exciton saturation
5. Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics
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1. Low-temperature-grown surface-reflection all-optical switch (LOTOS);Optical and Quantum Electronics;2001
2. Recent developments and applications in electroabsorption semiconductor modulators;Materials Science and Engineering: R: Reports;1999-08
3. Ultrafast All-Optical Switch Using Low-Temperature-Grown InGaAs/InAlAs Multiple-Quantum Wells;Springer Series in Photonics;1999
4. Static and dynamic response of multiple-quantum-well voltage-controlled bistable laser diodes;IEEE Journal of Quantum Electronics;1996-05
5. RECENT DEVELOPMENTS AND APPLICATIONS IN ELECTROABSORPTION SEMICONDUCTOR MODULATORS;Journal of Nonlinear Optical Physics & Materials;1995-04
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