Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1938267
Reference9 articles.
1. Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors
2. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
3. Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons
4. Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001)
5. Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructures
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3. High-k dielectrics for 4H-silicon carbide: present status and future perspectives;Journal of Materials Chemistry C;2021
4. Improving the quality of Al2O3/4H-SiC interface for device applications;Materials Science in Semiconductor Processing;2018-07
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