Gating of high-mobility InAs metamorphic heterostructures-Reference-Cited by-同舟云学术

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Gating of high-mobility InAs metamorphic heterostructures

Published:2014-12-29 Issue:26 Volume:105 Page:262105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shabani J.¹,McFadden A. P.²,Shojaei B.³,Palmstrøm C. J.¹²³

Affiliation:

1. California NanoSystems Institute, University of California, Santa Barbara, California 93106, USA

2. Department of Electrical Engineering, University of California, Santa Barbara, California 93106, USA

3. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

Microsoft Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905370

Reference20 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Spintronics: A Spin-Based Electronics Vision for the Future

3. Spintronics: Fundamentals and applications

4. Controlled multiple quantum coherences of nuclear spins in a nanometre-scale device

5. Spin–orbit qubit in a semiconductor nanowire

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1. Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas;Quantum Frontiers;2024-07-26

2. A clean ballistic quantum point contact in strontium titanate;Nature Electronics;2023-06-22

3. Spin-orbit coupling and electron scattering in high-quality InSb1−xAsx quantum wells;Physical Review B;2022-10-17

4. Controlling Fermi level pinning in near-surface InAs quantum wells;Applied Physics Letters;2022-08-29

5. Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate;Physical Review B;2022-05-06

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