Optimization of the semiconductor-metal transition in VO2 epitaxial thin films as a function of oxygen growth pressure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4866806
Reference29 articles.
1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature
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3. Femtosecond laser excitation of the semiconductor‐metal phase transition in VO2
4. Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices
5. Ultrafast insulator-metal phase transition in VO2studied by multiterahertz spectroscopy
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