Achieving surface recombination velocity below 10 cm/s in n-type germanium using ALD Al2O3
Author:
Affiliation:
1. Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, 02150 Espoo, Finland
Funder
Business Finland
Academy of Finland
European Commission
Finnish Research Impact Foundation
Aalto ELEC Doctoral School
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0071552
Reference45 articles.
1. M. Myronov, Molecular Beam Epitaxy (Elsevier, 2018), p. 37.
2. N-Channel Germanium MOSFET Fabricated Below 360 $^{ \circ}\hbox{C}$ by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs
3. High performance germanium MOSFETs
4. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
5. Thermal desorption of Ge native oxides and loss of Ge from the surface
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