Simulation study of type-II Ge/Si quantum dot for solar cell applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4821114
Reference21 articles.
1. Solar cell efficiency tables (version 40)
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4. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell
5. Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
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1. One- and few-particle optics of the valence band in lens-shaped Ge/Si quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2023-06
2. Fabrication and simulation of neutral-beam-etched silicon nanopillars;Vacuum;2020-11
3. The possibility of self-assembly of complex nanostructures with pre-defined geometry under the action of laser field;APPLICATION OF MATHEMATICS IN TECHNICAL AND NATURAL SCIENCES: 11th International Conference for Promoting the Application of Mathematics in Technical and Natural Sciences - AMiTaNS’19;2019
4. Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide;Nanotechnology;2017-11-06
5. Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice;IEEE Transactions on Electron Devices;2017-11
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