Simulation study of type-II Ge/Si quantum dot for solar cell applications

Author:

Hu Weiguo,Maksudur Rahman Mohammad,Lee Ming-Yi,Li Yiming,Samukawa Seiji

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. One- and few-particle optics of the valence band in lens-shaped Ge/Si quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2023-06

2. Fabrication and simulation of neutral-beam-etched silicon nanopillars;Vacuum;2020-11

3. The possibility of self-assembly of complex nanostructures with pre-defined geometry under the action of laser field;APPLICATION OF MATHEMATICS IN TECHNICAL AND NATURAL SCIENCES: 11th International Conference for Promoting the Application of Mathematics in Technical and Natural Sciences - AMiTaNS’19;2019

4. Physical and electrical characteristics of Si/SiC quantum dot superlattice solar cells with passivation layer of aluminum oxide;Nanotechnology;2017-11-06

5. Design and Simulation of Intermediate Band Solar Cell With Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice;IEEE Transactions on Electron Devices;2017-11

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