Atmospheric photoassisted chemical vapor deposition of Si using ultraviolet‐light irradiated H2carrier gas and nonexcited SiH2Cl2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108064
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models;Applied Physics Reviews;2019-03
2. Contribution of dangling-bond regeneration channels in the synchrotron-radiation-excited epitaxy of Si from SiH2Cl2;Journal of Applied Physics;2001-06-15
3. Variation of Size and Density of Pyramidal Hillock during Epitaxial Growth of Silicon Using Dichlorosilane Gas;Journal of The Electrochemical Society;1995-11-01
4. Adsorption and decomposition of dichlorosilane on porous silicon surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-01
5. Growth Defect Observation with Pyramidal Hillock and Reduction by Photoexcited Hydrogen in Si CVD with SiH2Cl2;Journal of The Electrochemical Society;1994-09-01
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