Improved modulator characteristics using tensile strain in long‐wavelength InGaAs/InGaAsP multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111161
Reference3 articles.
1. Quantum Wells For Optical Information Processing
2. Quantum confined Stark effect in InGaAs/InP and InGaAs/InGaAsP multi quantum well structures
3. Heterojunction band offsets and effective masses in III-V quaternary alloys
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical properties of asymmetric InGaAs/InP coupled quantum wells;IEE Proceedings - Optoelectronics;2000-04-01
2. Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures;Journal of Applied Physics;1998-05
3. Universal curves for optical‐matrix elements of strained quantum wells;Applied Physics Letters;1995-02-13
4. Amplified spontaneous emission spectroscopy in strained quantum-well lasers;IEEE Journal of Selected Topics in Quantum Electronics;1995
5. Electric‐field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator;Journal of Applied Physics;1995-01
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