Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3672447
Reference43 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. Enhanced strain relaxation in Si/GexSi1−x/Si heterostructures via point‐defect concentrations introduced by ion implantation
3. Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures
4. Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
5. Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures
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1. Thermally activated diffusion and lattice relaxation in (Si)GeSn materials;Physical Review Materials;2020-03-20
2. Effect of asymmetric strain relaxation on dislocation relaxation processes in heteroepitaxial semiconductors;Journal of Applied Physics;2017-02-21
3. Investigation of blistering process in H-implanted semipolar GaN;Scripta Materialia;2015-01
4. Effect of the substrate orientation on the formation of He-plates in Si;Journal of Applied Physics;2013-11-21
5. Nonlinear elastic response of cubic crystals to biaxial strain;Computational Materials Science;2013-11
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