Electrical characteristics of MoSe2 TFTs dependent on the Al2O3 capping layer
Author:
Affiliation:
1. School of Electrical Engineering, Korea University, Seoul 02841, South Korea
2. Department of Micro/Nano Systems, Korea University, Seoul 02841, South Korea
Funder
Ministry of Education (MOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4971258
Reference29 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. High-Detectivity Multilayer MoS2Phototransistors with Spectral Response from Ultraviolet to Infrared
3. Graphene-Like Two-Dimensional Materials
4. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures
5. Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2
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