Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys
Author:
Affiliation:
1. Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
Funder
National Science Foundation
Air Force Office of Scientific Research
U.S. Department of Energy
Army Research Office
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5140995
Reference68 articles.
1. Point-Defect Nature of the Ultraviolet Absorption Band in AlN
2. Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals
3. S. F. Chichibu , H. Miyake , K. Hiramtsu , and A. Uedono , III-Nitride Ultraviolet Emitters ( Springer, Cham, 2016), pp. 115–136.
4. Carbon as a source for yellow luminescence in GaN: Isolated CN defect or its complexes
5. Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes
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