Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4802275
Reference48 articles.
1. Variable minority carrier transport model for amorphous silicon solar cells
2. Photo- and electro-luminescence of a-Si:H and mixed-phase alloys
3. Double injection as a technique to study charge carrier transport and recombination in bulk-heterojunction solar cells
4. Boron doped hydrogenated nanocrystalline silicon thin films prepared by layer-by-layer technique and its application in n-i-p flexible amorphous silicon thin film solar cells
5. Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
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1. Revealing the Negative Capacitance Effect in Silicon Quantum Dot Light-Emitting Diodes via Temperature-Dependent Capacitance-Voltage Characterization;IEEE Photonics Journal;2022-08
2. Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes;Applied Physics B;2018-02-09
3. Capacitance in Waveguide-Integrated Hydrogenated Amorphous Silicon p-i-n Diodes for Active Photonic Devices;Journal of Nanoelectronics and Optoelectronics;2016-08-01
4. Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias;Applied Physics Letters;2014-09-22
5. Temperature-dependent ac current-voltage-capacitance characteristics of GaN-based light-emitting diodes under high forward bias;physica status solidi (c);2014-02
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