Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1639955
Reference18 articles.
1. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions
2. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
3. Emerging gallium nitride based devices
4. Two‐dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substrates
5. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
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5. Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors;Journal of Applied Physics;2008-05-15
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