Electron traps in GaAs1−xPxalloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93993
Reference6 articles.
1. Effect of Te and S Donor Levels on the Properties ofGaAs1−xPxnear the Direct-Indirect Transition
2. Native levels and degradation in GaAs0.6P0.4 LEDs
3. Electron trap behaviour in Te-doped GaAs0.6P0.4
4. New technique for identification of deep‐level trap emission to indirect conduction minima in GaAs
5. Donor energy level for Se in Ga1−xAlxAs
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of parameters of deep level defects from numerical fit of deep level transient spectroscopy spectra: Analysis of accuracy and sensitivity to noise;Review of Scientific Instruments;1998-01
2. New electron and hole traps in GaAsP alloy;International Journal of Electronics;1997-07
3. Properties of DX center in Te‐doped In1−xG axAsyP1−y/GaAs0.61 P/d0.39;Applied Physics Letters;1996-11-04
4. Behavior of silicon-, sulfur-, and tellurium-relatedDXcenters in liquid-phase-epitaxy and vapor-phase-epitaxyGaAs1−xPxalloys;Physical Review B;1996-03-15
5. Chapter 8 Deep Level Defects in Epitaxial III/V Materials;Imperfections in III/V Materials;1993
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