Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells-Reference-Cited by-同舟云学术

Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

Published:2016-06-07 Issue:21 Volume:119 Page:215707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nippert Felix¹^ORCID,Nirschl Anna²,Schulz Tobias³,Callsen Gordon¹,Pietzonka Ines²,Westerkamp Steffen¹,Kure Thomas¹,Nenstiel Christian¹^ORCID,Strassburg Martin²,Albrecht Martin³,Hoffmann Axel¹

Affiliation:

1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany

2. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany

3. Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Seventh Framework Programme (FP7)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953254

Reference35 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Ultra-High Efficiency White Light Emitting Diodes

3. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

4. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

5. Piezoelectric effects in the optical properties of strained InGaN quantum wells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination in Polar InGaN/GaN LED Structures with Wide Quantum Wells;physica status solidi (RRL) – Rapid Research Letters;2023-03-08

2. High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays;IEEE Electron Device Letters;2020-09

3. Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities;Physical Review B;2018-10-02

4. Suppression of the quantum-confined Stark effect in polar nitride heterostructures;Communications Physics;2018-08-23

5. The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement;IEEE Photonics Journal;2018-04