Analysis of doping induced wafer bow during GaN:Si growth on sapphire
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4739278
Reference20 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire
3. Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition
4. GaN-based epitaxy on silicon: stress measurements
5. In situ monitoring of the stress evolution in growing group-III-nitride layers
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