Optical measurements of electronic bandstructure in AlGaInP alloys grown by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358631
Reference14 articles.
1. InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface‐emitting lasers
2. Nonexistence of Long-Range Order in Ga0.5In0.5P Epitaxial Layers Grown on (111)B and (110)GaAs Substrates
3. Exciton localization effects and heterojunction band offset in (Ga,In)P-(Al,Ga,In)P multiple quantum wells
4. MOVPE growth of InAlGaP-based visible vertical-cavity surface-emitting lasers
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1. Direct Imaging of the Carrier Capture into Individual InP Quantum Dots of a Semiconductor Disk Laser Membrane;ACS Nano;2022-03-08
2. Epitaxial and quasiepitaxial growth of halide perovskites: New routes to high end optoelectronics;APL Materials;2020-10-01
3. Optical properties of AlxIn1-xP ternary semiconductor alloys;Journal of Computational Methods in Sciences and Engineering;2018-02-22
4. Direct enumeration studies of band-gap properties of AlxGayIn1−x−yP alloys;Journal of Applied Physics;2009-06-15
5. Optical properties of gas source MBE grown AlInP on GaAs;Materials Science and Engineering: B;2007-05
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